Sensor type |
MPCCD Phase Ib |
MPCCD Phase III/III-L |
Features |
Standard sensors |
Compared to standard sensors [ Phase III ] ● High QE, Large PSF [ Phase III-L ] ● High QE, Large PSF ● Low peak signal / Low noise |
Sensor structure |
50 μm-thick Epitaxial silicon, Front illumination |
300 μm-thick Bulk silicon, Back illumination |
Frame rate |
60 fps |
30 fps |
Image format |
512 x 1024, 50 μm pixels |
512 x 1024, 50 μm pixels |
Image area |
51.2 x 25.6 mm 2 |
51.2 x 25.6 mm 2 |
Peak signal |
3.8 x 10 6 electrons = 2310 photons @6keV |
[ Phase III ] 3.2 x 10 6 electrons = 1950 photons @6keV [ Phase III-L ] 1.7 x 10 6 electrons = 1030 photons @6keV |
System noise |
110 ~ 180 electrons = 0.07 ~ 0.11 photons @6keV |
[ Phase III ] 130~230 electrons = 0.08~0.14 photons @6keV [ Phase III-L ] 130~230 electrons = 0.02~0.03 photons @6keV |
Linearity error |
~1 % max. |
~1 % max. |
Cross talk between ports |
50 ppm (after calibration) |
50 ppm (after calibration) |
Background drift (12 hours) |
< 90 electrons = 0.05 photons @ 6keV |
< 45 electrons = 0.03 photons @ 6keV |
Parallel transfer under shoot |
< 0.01 % |
< 0.4 % |
Serial transfer under shoot |
0.2 % max. |
0.3 % max. |
Point spread function |
3.3 μm @ 12 keV 830 photons injection |
13.9 μm @ 12 keV 1030 photons injection |